Name: A Numerical Study for Doping of Graphene Transistors (en Inglés)
SKU: 25766380
Price: 49.99 USD
Availability: InStock
Author: Carmine Tommaso Recchiuto

portada A Numerical Study for Doping of Graphene Transistors (en Inglés)

A Numerical Study for Doping of Graphene Transistors (en Inglés)

Formato

Libro Físico

Editorial

Lap Lambert Academic Publishing

Autor

Carmine Tommaso Recchiuto

Año

2012

Idioma

Inglés

N° páginas

100

Encuadernación

Tapa Blanda

ISBN

3659192422

ISBN13

9783659192425

Categorías

Ingeniería electrónica

A Numerical Study for Doping of Graphene Transistors (en Inglés)

Carmine Tommaso Recchiuto (Autor) · Lap Lambert Academic Publishing · Tapa Blanda

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Reseña del libro "A Numerical Study for Doping of Graphene Transistors (en Inglés)"

Although CMOS technology will still be in a near future the principal material for all electronic manifacturers, in recent years new discoveries have catalyzed research interest in order to overcome the physical limitations of silicon. Graphene is undoubtedly one of the most interesting of these, combining nanometric thickness, atomic width and a very high conductivity. Unfortunately, the absence of an energy gap between the valence band and the conduction band makes the material not optimal for digital applications. The purpose of this work is to evaluate the possible solutions to the problem by means of chemical functionalization and doping in graphene nanoribbons. The book starts with a wide description of the calculation methodology, the tight-binding method with the aid of the software package Gaussian 03, and the application of this technique to the case of an infinite plane of graphene, analyzing all the necessary steps to realize a transistor in graphene useful for digital applications. The complete simulation of a FET in graphene is therefore showed, underlying the importance of doping or functionalization for this material.