Name: Design of Read (en Inglés)
SKU: 62654738
Price: 74.06 USD
Availability: InStock
Author: Mohamed Elshamy; Hassan Mostafa; M. Sameh Said

Formato

Libro Físico

Editorial

Lap Lambert Academic Publishing

Autor

Mohamed Elshamy; Hassan Mostafa; M. Sameh Said

Idioma

Inglés

N° páginas

100

Encuadernación

Tapa Blanda

ISBN13

9783659783135

Design of Read (en Inglés)

Mohamed Elshamy; Hassan Mostafa; M. Sameh Said (Autor) · Lap Lambert Academic Publishing · Tapa Blanda

Libro Nuevo Importado

Envío: 25 a 32 días háb.

$ 134.66$ 74.06

-45%

Costos de importación incluídos en el precio ✅

Libro Nuevo

Quedan 10 unidades

$ 74.06

Llega entre el 28 Sep y el 12 Oct a Quito, Pichincha. Seleccionar ubicación

Agregar a lista de deseos

Reseña del libro "Design of Read (en Inglés)"

Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano-computing facilities. The recently found memristor, "the missing fourth circuit element", is a potential candidate for the next-generation memory and has received extra attention in the last few years. In this book, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Besides, memristor-based memory Read/Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element. This work is targeting at solving this issue by providing three novel Read/Write circuit designs to facilitate the reading and writing operation of the memristor device. The proposed circuits exhibit lower power consumption and less delay when compared to recently published Read/Write circuits. In addition, two of the proposed circuits have the advantage of non-destructive successive reading cycles capability as well as occupying small layout area.