Name: Development and Packaging of Microsystems Using Foundry Services (en Inglés)
SKU: 59647606
Price: 32.35 USD
Availability: InStock
Author: Butler, Jeffrey T.
ISBN: 9781286866931

portada Development and Packaging of Microsystems Using Foundry Services (en Inglés)

Development and Packaging of Microsystems Using Foundry Services (en Inglés)

Formato

Libro Físico

Autor

Jeffrey T. Butler

Editorial

Biblioscholar

Idioma

Inglés

N° páginas

328

Encuadernación

Tapa Blanda

Dimensiones

24.6x18.9x1.8 cm

Peso

0.59 kg.

ISBN13

9781286866931

Categorías

Educación

Development and Packaging of Microsystems Using Foundry Services (en Inglés)

Jeffrey T. Butler (Autor) · Biblioscholar · Tapa Blanda

Libro Nuevo Importado

Envío: 16 a 22 días háb.

$ 64.69$ 32.35

-50%

Costos de importación incluídos en el precio ✅

Libro Nuevo

Quedan 50 unidades

$ 32.35

Llega entre el 06 Oct y el 19 Oct a Quito, Pichincha. Seleccionar ubicación

Agregar a lista de deseos

Reseña del libro "Development and Packaging of Microsystems Using Foundry Services (en Inglés)"

Micro-electro-mechanical systems (MEMS) is a relatively new and rapidly growing field of research. Several advances to the MEMS and microsystem state of the art were achieved through the design and characterization of novel MEMS devices and packaging, which are compatible with CMOS microelectronics. Empirical and theoretical models of polysilicon thermal actuators were developed to understand and simulate the behavior of thermal actuators. These models can be implemented in microelectronic circuit simulators such as SPICE and allow the simultaneous simulation of thermally actuated MEMS and microelectronics. The most extensive investigation of the Multi-User MEMS Processes (MUMPs) polysilicon resistivity was also performed. The first published value for the thermal coefficient of resistivity (TCR) of the MUMPs Poly 1 layer was determined as 1.25 x 10-3 K-1. In addition, the sheet resistance of all the MUMPs polysilicon layers was found to be dependent on the linewidth due to the presence or absence of lateral phosphorus diffusion.