Name: Fundamental and Applied Problems of Terahertz Devices and Technologies (en Inglés)
SKU: 55116893
Price: 169.83 USD
Availability: InStock
Author: Maxim V Ryzhii

portada Fundamental and Applied Problems of Terahertz Devices and Technologies (en Inglés)

Fundamental and Applied Problems of Terahertz Devices and Technologies (en Inglés)

Formato

Libro Físico

Editorial

World Scientific Pub Co Inc

Autor

Maxim V Ryzhii

Idioma

Inglés

Encuadernación

Tapa Dura

ISBN13

9789813223271

Fundamental and Applied Problems of Terahertz Devices and Technologies (en Inglés)

Maxim V Ryzhii (Autor) · World Scientific Pub Co Inc · Tapa Dura

Libro Nuevo Importado

Envío: 19 a 26 días háb.

$ 308.79$ 169.83

-45%

Costos de importación incluídos en el precio ✅

Libro Nuevo

Quedan más de 100 unidades

$ 169.83

Llega entre el 18 Sep y el 01 Oct a Quito, Pichincha. Seleccionar ubicación

Agregar a lista de deseos

Reseña del libro "Fundamental and Applied Problems of Terahertz Devices and Technologies (en Inglés)"

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression.The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 - November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz.This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.