Name: Light Scattering in Semiconductor Structures and Superlattices (Nato Science Series b: ) (en Inglés)
SKU: 18949712
Price: 214.01 USD
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Author: Nato Advanced Research Workshop On Light

portada Light Scattering in Semiconductor Structures and Superlattices (Nato Science Series b: ) (en Inglés)

Light Scattering in Semiconductor Structures and Superlattices (Nato Science Series b: ) (en Inglés)

Formato

Libro Físico

Editorial

Springer

Autor

Nato Advanced Research Workshop On Light

Año

1992

Idioma

Inglés

N° páginas

606

Encuadernación

Tapa Dura

ISBN

0306440369

ISBN13

9780306440366

N° edición

1991

Categorías

Física de la materia condensada (física del estado líquido y del estado sólido)

Light Scattering in Semiconductor Structures and Superlattices (Nato Science Series b: ) (en Inglés)

Nato Advanced Research Workshop On Light (Autor) · Springer · Tapa Dura

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Reseña del libro "Light Scattering in Semiconductor Structures and Superlattices (Nato Science Series b: ) (en Inglés)"

Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.