Name: Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications (en Inglés)
SKU: 55718952
Price: 104.13 USD
Availability: InStock
Author: Suh Song Young,Tayal Shubham,Rahi Shiromani Balmukund

portada Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications (en Inglés)

Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications (en Inglés)

Formato

Libro Físico

Editorial

Taylor & Francis Ltd Okt 2023,

Autor

Suh Song Young,Tayal Shubham,Rahi Shiromani Balmukund

Idioma

Inglés

Encuadernación

Tapa Dura

ISBN13

9781032445311

Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications (en Inglés)

Suh Song Young,Tayal Shubham,Rahi Shiromani Balmukund (Autor) · Taylor & Francis Ltd Okt 2023, · Tapa Dura

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Reseña del libro "Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications (en Inglés)"

This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts.The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET.This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device-circuit codesign.