Name: The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation (Computational Microelectronics) (en Inglés)
SKU: 62086078
Price: 121.44 USD
Availability: InStock
Author: Mahdi Pourfath
ISBN: 9783709148389

portada The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation (Computational Microelectronics) (en Inglés)

The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation (Computational Microelectronics) (en Inglés)

Formato

Libro Físico

Editorial

Springer

Autor

Mahdi Pourfath

Idioma

Inglés

N° páginas

273

Encuadernación

Tapa Blanda

ISBN13

9783709148389

N° edición

The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation (Computational Microelectronics) (en Inglés)

Mahdi Pourfath (Autor) · Springer · Tapa Blanda

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Reseña del libro "The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation (Computational Microelectronics) (en Inglés)"

For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time.In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.