B-Days hasta 60% dto  Ver más

Enviar a
Quito, Pichincha
0
  • argentina
  • chile
  • colombia
  • españa
  • méxico
  • perú
  • estados unidos
  • internacional

Selecciona tu país

América

Europa

Resto del mundo

portada Advanced Memristor Modeling: Memristor Circuits and Networks (en Inglés)
Formato
Libro Físico
Editorial
Idioma
Inglés
N° páginas
184
Encuadernación
Tapa Dura
Dimensiones
24.4x17x1.6 cm
Peso
0.60 kg.
ISBN13
9783038971047

Advanced Memristor Modeling: Memristor Circuits and Networks (en Inglés)

Valeri Mladenov (Autor) · Mdpi AG · Tapa Dura

Advanced Memristor Modeling: Memristor Circuits and Networks (en Inglés) - Mladenov, Valeri

Libro Nuevo Importado
Envío: 17 a 24 días háb.
$ 153.56$ 84.46
-45%
Costos de importación incluídos en el precio ✅
Libro Nuevo

Quedan más de 100 unidades

$ 84.46
Llega entre el 18 Sep y el 01 Oct a Quito, Pichincha. Seleccionar ubicación

Reseña del libro "Advanced Memristor Modeling: Memristor Circuits and Networks (en Inglés)"

The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generation's electronic circuits and for their widespread application in all the areas of industry. In this aspect the analysis of new efficient and advanced electronic elements and circuits is an essential field of the highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides has been investigated since 1970 and it is a promising technology for constructing new electronic memories. It has been established that such oxide materials have the ability for changing their conductance in accordance to the applied voltage and memorizing their state for a long-time interval. Similar behaviour has been predicted for the memristor element by Leon Chua in 1971. The memristor is proposed in accordance to symmetry considerations and the relationships between the four basic electric quantities - electric current i, voltage v, charge q and magnetic flux Ψ. The memristor is an essential passive one-port element together with the resistor, inductor, and capacitor. The Williams HP research group has made a link between resistive switching devices, and the memristor proposed by Chua. A number of scientific papers related to memristors and memristor devices have been issued and several memristor models have been proposed. The memristor is a highly nonlinear component. It relates the electric charge q and the flux linkage, expressed as a time integral of the voltage. The memristor element has the important capability for remembering the electric charge passed through its cross-section and its respective resistance, when the electrical signals are switched off. Due to its nano-scale dimensions, non-volatility and memorizing properties, the memristor is a sound potential candidate for application in computer high-density memories, artificial neural networks and in many other electronic devices.

Opiniones del libro

Preguntas frecuentes sobre el libro

Todos los libros de nuestro catálogo son Originales.
El libro está escrito en Inglés.
La encuadernación de esta edición es Tapa Dura.

Preguntas y respuestas sobre el libro

¿Tienes una pregunta sobre el libro? Inicia sesión para poder agregar tu propia pregunta.

Opiniones sobre Buscalibre

Ver más opiniones de clientes