Name: Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications (en Inglés)
SKU: 58209474
Price: 140.37 USD
Availability: InStock
Author: Shacham-Diamand, Yosi ; Osaka, Tetsuya ; Datta, Madhav

portada Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications (en Inglés)

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications (en Inglés)

Formato

Libro Físico

Editorial

Springer

Autor

Shacham-Diamand, Yosi ; Osaka, Tetsuya ; Datta, Madhav

Idioma

Inglés

N° páginas

552

Encuadernación

Tapa Blanda

Dimensiones

23.4x15.6x2.9 cm

Peso

0.79 kg.

ISBN13

9781461497448

Categorías

Química física
Química industrial e ingeniería química
Ciencia de materiales

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications (en Inglés)

Shacham-Diamand, Yosi ; Osaka, Tetsuya ; Datta, Madhav (Autor) · Springer · Tapa Blanda

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Reseña del libro "Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications (en Inglés)"

In Advanced ULSI interconnects - fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous "Moore's law" which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g., speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.