Name: Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability (en Inglés)
Price: 42.52 USD
Availability: InStock
Author: Kim, Young-Hee ; Lee, Jack C.
ISBN: 9783031014246

portada Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability (en Inglés)

Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability (en Inglés)

Formato

Libro Físico

Autor

Jack C. Lee

Editorial

Springer

Idioma

Inglés

N° páginas

Encuadernación

Tapa Blanda

Dimensiones

23.5 x 19.1 x 0.6 cm

Peso

0.20 kg.

ISBN13

9783031014246

N° edición

Categorías

Ciencia de materiales
Ingeniería eléctrica

Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability (en Inglés)

Jack C. Lee (Autor) · Springer · Tapa Blanda

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Reseña del libro "Hf-Based High-K Dielectrics: Process Development, Performance Characterization, and Reliability (en Inglés)"

In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.